Dual N-Channel MOSFET, 350 mA, 60 V, 6-Pin SOT-666 Nexperia 2N7002PV,115

Κωδικός Προϊόντος της RS: 792-0768PΚατασκευαστής: NexperiaΚωδικός Κατασκευαστή: 2N7002PV,115
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

350 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-666

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

390 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

1.7mm

Typical Gate Charge @ Vgs

0.6 nC @ 4.5 V

Width

1.3mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.6mm

Λεπτομέρειες Προϊόντος

Dual N-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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P.O.A.

Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

Dual N-Channel MOSFET, 350 mA, 60 V, 6-Pin SOT-666 Nexperia 2N7002PV,115
Επιλέγξτε συσκευασία

P.O.A.

Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

Dual N-Channel MOSFET, 350 mA, 60 V, 6-Pin SOT-666 Nexperia 2N7002PV,115

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

350 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-666

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

390 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

1.7mm

Typical Gate Charge @ Vgs

0.6 nC @ 4.5 V

Width

1.3mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

0.6mm

Λεπτομέρειες Προϊόντος

Dual N-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more