P-Channel MOSFET, 520 mA, 30 V, 3-Pin SOT-23 Nexperia BSH202,215

Κωδικός Προϊόντος της RS: 780-5360Κατασκευαστής: NexperiaΚωδικός Κατασκευαστή: BSH202,215
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

P

Maximum Continuous Drain Current

520 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.35 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.9V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

417 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

2.9 nC @ 10 V

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1mm

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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P.O.A.

Μονάδας (διαθέσιμο σε μία ταινία) (Exc. Vat)Χωρίς Φ.Π.Α

P-Channel MOSFET, 520 mA, 30 V, 3-Pin SOT-23 Nexperia BSH202,215
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P.O.A.

Μονάδας (διαθέσιμο σε μία ταινία) (Exc. Vat)Χωρίς Φ.Π.Α

P-Channel MOSFET, 520 mA, 30 V, 3-Pin SOT-23 Nexperia BSH202,215

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

P

Maximum Continuous Drain Current

520 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.35 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.9V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

417 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3mm

Typical Gate Charge @ Vgs

2.9 nC @ 10 V

Width

1.4mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1mm

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more