N-Channel MOSFET, 550 mA, 200 V, 3-Pin SOT-223 Nexperia BSP122,115
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
550 mA
Maximum Drain Source Voltage
200 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.7mm
Width
3.7mm
Transistor Material
Si
Height
1.7mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
N-Channel MOSFET, 100V and Higher, Nexperia
MOSFET Transistors, NXP Semiconductors
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P.O.A.
Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α
10
P.O.A.
Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
10
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Ideate. Create. Collaborate
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
NexperiaChannel Type
N
Maximum Continuous Drain Current
550 mA
Maximum Drain Source Voltage
200 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
2.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
1.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.7mm
Width
3.7mm
Transistor Material
Si
Height
1.7mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
N-Channel MOSFET, 100V and Higher, Nexperia
MOSFET Transistors, NXP Semiconductors
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products