Nexperia N-Channel MOSFET, 375 mA, 250 V, 3-Pin SOT-223 BSP126,115

Κωδικός Προϊόντος της RS: 792-0875Κατασκευαστής: NexperiaΚωδικός Κατασκευαστή: BSP126,115
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

375 mA

Maximum Drain Source Voltage

250 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

1.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.7mm

Maximum Operating Temperature

+150 °C

Height

1.7mm

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 100V and Higher, Nexperia

MOSFET Transistors, NXP Semiconductors

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€ 7,00

€ 0,70 Μονάδας (Σε ένα καρούλι των 10) (Exc. Vat)Χωρίς Φ.Π.Α

€ 8,68

€ 0,868 Μονάδας (Σε ένα καρούλι των 10) Με Φ.Π.Α

Nexperia N-Channel MOSFET, 375 mA, 250 V, 3-Pin SOT-223 BSP126,115
Επιλέγξτε συσκευασία

€ 7,00

€ 0,70 Μονάδας (Σε ένα καρούλι των 10) (Exc. Vat)Χωρίς Φ.Π.Α

€ 8,68

€ 0,868 Μονάδας (Σε ένα καρούλι των 10) Με Φ.Π.Α

Nexperia N-Channel MOSFET, 375 mA, 250 V, 3-Pin SOT-223 BSP126,115

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

375 mA

Maximum Drain Source Voltage

250 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

1.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

3.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.7mm

Maximum Operating Temperature

+150 °C

Height

1.7mm

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 100V and Higher, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more