Nexperia P-Channel MOSFET, 180 mA, 50 V, 3-Pin SOT-23 BSS84AK,215

Κωδικός Προϊόντος της RS: 792-0908PΚατασκευαστής: NexperiaΚωδικός Κατασκευαστή: BSS84AK,215
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

P

Maximum Continuous Drain Current

180 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

420 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

1.4mm

Transistor Material

Si

Length

3mm

Typical Gate Charge @ Vgs

0.26 nC @ 5 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

Λεπτομέρειες Προϊόντος

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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€ 16,00

€ 0,08 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

€ 19,84

€ 0,099 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α

Nexperia P-Channel MOSFET, 180 mA, 50 V, 3-Pin SOT-23 BSS84AK,215
Επιλέγξτε συσκευασία

€ 16,00

€ 0,08 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

€ 19,84

€ 0,099 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α

Nexperia P-Channel MOSFET, 180 mA, 50 V, 3-Pin SOT-23 BSS84AK,215

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Καρούλι
200 - 400€ 0,08€ 8,00
500+€ 0,05€ 5,00

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

P

Maximum Continuous Drain Current

180 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

420 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

1.4mm

Transistor Material

Si

Length

3mm

Typical Gate Charge @ Vgs

0.26 nC @ 5 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

Λεπτομέρειες Προϊόντος

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more