Nexperia NX3008CBKS Dual N/P-Channel MOSFET, 200 mA, 350 mA, 30 V, 6-Pin SOT-363 NX3008CBKS,115
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
NexperiaChannel Type
N, P
Maximum Continuous Drain Current
200 mA, 350 mA
Maximum Drain Source Voltage
30 V
Series
NX3008CBKS
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.4 Ω, 4.1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
990 mW
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
2
Width
1.35mm
Length
2.2mm
Typical Gate Charge @ Vgs
0.52 nC @ 4.5 V, 0.55 nC @ -4.5 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1mm
Automotive Standard
AEC-Q101
Λεπτομέρειες Προϊόντος
Dual N/P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 390,00
€ 0,13 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 483,60
€ 0,161 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α
3000
€ 390,00
€ 0,13 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 483,60
€ 0,161 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
3000
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
NexperiaChannel Type
N, P
Maximum Continuous Drain Current
200 mA, 350 mA
Maximum Drain Source Voltage
30 V
Series
NX3008CBKS
Package Type
SOT-363
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.4 Ω, 4.1 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
990 mW
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
2
Width
1.35mm
Length
2.2mm
Typical Gate Charge @ Vgs
0.52 nC @ 4.5 V, 0.55 nC @ -4.5 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
1mm
Automotive Standard
AEC-Q101
Λεπτομέρειες Προϊόντος
Dual N/P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products