Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-1 A
Maximum Collector Emitter Voltage
-150 V
Package Type
SOT-223 (SC-73)
Mounting Type
Surface Mount
Maximum Power Dissipation
1.4 W
Minimum DC Current Gain
100
Transistor Configuration
Single
Maximum Collector Base Voltage
-200 V
Maximum Emitter Base Voltage
-6 V
Maximum Operating Frequency
100 MHz
Pin Count
3 + Tab
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
6.7 x 3.7 x 1.8mm
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
€ 13,00
€ 0,65 Μονάδας (Σε ένα πακέτο των 20) (Exc. Vat)Χωρίς Φ.Π.Α
€ 16,12
€ 0,806 Μονάδας (Σε ένα πακέτο των 20) Με Φ.Π.Α
Standard
20
€ 13,00
€ 0,65 Μονάδας (Σε ένα πακέτο των 20) (Exc. Vat)Χωρίς Φ.Π.Α
€ 16,12
€ 0,806 Μονάδας (Σε ένα πακέτο των 20) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Standard
20
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
| Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
|---|---|---|
| 20 - 20 | € 0,65 | € 13,00 |
| 40 - 80 | € 0,63 | € 12,60 |
| 100 - 180 | € 0,39 | € 7,80 |
| 200 - 380 | € 0,39 | € 7,80 |
| 400+ | € 0,39 | € 7,80 |
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-1 A
Maximum Collector Emitter Voltage
-150 V
Package Type
SOT-223 (SC-73)
Mounting Type
Surface Mount
Maximum Power Dissipation
1.4 W
Minimum DC Current Gain
100
Transistor Configuration
Single
Maximum Collector Base Voltage
-200 V
Maximum Emitter Base Voltage
-6 V
Maximum Operating Frequency
100 MHz
Pin Count
3 + Tab
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
6.7 x 3.7 x 1.8mm
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.


