Nexperia PBSS3515VS,115 Dual PNP Transistor, -500 mA, -15 V, 6-Pin SSMini

Κωδικός Προϊόντος της RS: 518-1435Κατασκευαστής: NexperiaΚωδικός Κατασκευαστή: PBSS3515VS,115
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Προβολή όλων σε Bipolar Transistors

Τεχνικό φυλλάδιο

Προδιαγραφές

Transistor Type

PNP

Maximum DC Collector Current

-500 mA

Maximum Collector Emitter Voltage

-15 V

Package Type

SSMini

Mounting Type

Surface Mount

Maximum Power Dissipation

200 mW

Minimum DC Current Gain

200

Transistor Configuration

Isolated

Maximum Collector Base Voltage

15 V

Maximum Emitter Base Voltage

6 V

Maximum Operating Frequency

280 MHz

Pin Count

6

Number of Elements per Chip

2

Dimensions

0.6 x 1.7 x 1.3mm

Maximum Operating Temperature

+150 °C

Λεπτομέρειες Προϊόντος

Low Saturation Voltage PNP Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

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onsemi CPH6531-TL-E Dual PNP Transistor, 1 A, 50 V, 6-Pin CPH
P.O.A.Μονάδας (Σε ένα πακέτο των 25) (Exc. Vat)Χωρίς Φ.Π.Α

P.O.A.

Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α

Nexperia PBSS3515VS,115 Dual PNP Transistor, -500 mA, -15 V, 6-Pin SSMini
Επιλέγξτε συσκευασία

P.O.A.

Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α

Nexperia PBSS3515VS,115 Dual PNP Transistor, -500 mA, -15 V, 6-Pin SSMini

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
onsemi CPH6531-TL-E Dual PNP Transistor, 1 A, 50 V, 6-Pin CPH
P.O.A.Μονάδας (Σε ένα πακέτο των 25) (Exc. Vat)Χωρίς Φ.Π.Α

Τεχνικό φυλλάδιο

Προδιαγραφές

Transistor Type

PNP

Maximum DC Collector Current

-500 mA

Maximum Collector Emitter Voltage

-15 V

Package Type

SSMini

Mounting Type

Surface Mount

Maximum Power Dissipation

200 mW

Minimum DC Current Gain

200

Transistor Configuration

Isolated

Maximum Collector Base Voltage

15 V

Maximum Emitter Base Voltage

6 V

Maximum Operating Frequency

280 MHz

Pin Count

6

Number of Elements per Chip

2

Dimensions

0.6 x 1.7 x 1.3mm

Maximum Operating Temperature

+150 °C

Λεπτομέρειες Προϊόντος

Low Saturation Voltage PNP Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
onsemi CPH6531-TL-E Dual PNP Transistor, 1 A, 50 V, 6-Pin CPH
P.O.A.Μονάδας (Σε ένα πακέτο των 25) (Exc. Vat)Χωρίς Φ.Π.Α