Nexperia PBSS4240V,115 NPN Transistor, 2 A, 40 V, 6-Pin SSMini
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
NexperiaTransistor Type
NPN
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
40 V
Package Type
SSMini
Mounting Type
Surface Mount
Maximum Power Dissipation
1.2 W
Transistor Configuration
Single
Maximum Collector Base Voltage
40 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
150 MHz
Pin Count
6
Number of Elements per Chip
1
Dimensions
0.6 x 1.7 x 1.3mm
Maximum Operating Temperature
+150 °C
Λεπτομέρειες Προϊόντος
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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P.O.A.
Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α
10
P.O.A.
Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
10
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
NexperiaTransistor Type
NPN
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
40 V
Package Type
SSMini
Mounting Type
Surface Mount
Maximum Power Dissipation
1.2 W
Transistor Configuration
Single
Maximum Collector Base Voltage
40 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
150 MHz
Pin Count
6
Number of Elements per Chip
1
Dimensions
0.6 x 1.7 x 1.3mm
Maximum Operating Temperature
+150 °C
Λεπτομέρειες Προϊόντος
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products