Nexperia PBSS4480X,135 NPN Transistor, 4 A, 80 V, 4-Pin UPAK

Κωδικός Προϊόντος της RS: 518-1700PΚατασκευαστής: NexperiaΚωδικός Κατασκευαστή: PBSS4480X,135
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Τεχνικό φυλλάδιο

Προδιαγραφές

Transistor Type

NPN

Maximum DC Collector Current

4 A

Maximum Collector Emitter Voltage

80 V

Package Type

UPAK

Mounting Type

Surface Mount

Maximum Power Dissipation

2.5 W

Minimum DC Current Gain

250

Transistor Configuration

Single

Maximum Collector Base Voltage

80 V

Maximum Emitter Base Voltage

5 V

Maximum Operating Frequency

150 MHz

Pin Count

4

Number of Elements per Chip

1

Dimensions

1.6 x 4.6 x 2.6mm

Maximum Operating Temperature

+150 °C

Λεπτομέρειες Προϊόντος

Low Saturation Voltage NPN Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 84,00

€ 0,84 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

€ 104,16

€ 1,042 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α

Nexperia PBSS4480X,135 NPN Transistor, 4 A, 80 V, 4-Pin UPAK
Επιλέγξτε συσκευασία

€ 84,00

€ 0,84 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

€ 104,16

€ 1,042 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α

Nexperia PBSS4480X,135 NPN Transistor, 4 A, 80 V, 4-Pin UPAK
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Quantity ΠοσότηταΤιμή μονάδαςPer Καρούλι
100 - 240€ 0,84€ 8,40
250 - 490€ 0,78€ 7,80
500 - 990€ 0,73€ 7,30
1000+€ 0,68€ 6,80

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Transistor Type

NPN

Maximum DC Collector Current

4 A

Maximum Collector Emitter Voltage

80 V

Package Type

UPAK

Mounting Type

Surface Mount

Maximum Power Dissipation

2.5 W

Minimum DC Current Gain

250

Transistor Configuration

Single

Maximum Collector Base Voltage

80 V

Maximum Emitter Base Voltage

5 V

Maximum Operating Frequency

150 MHz

Pin Count

4

Number of Elements per Chip

1

Dimensions

1.6 x 4.6 x 2.6mm

Maximum Operating Temperature

+150 °C

Λεπτομέρειες Προϊόντος

Low Saturation Voltage NPN Transistors

A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, Nexperia

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more