Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-1 A
Maximum Collector Emitter Voltage
-60 V
Package Type
TSOP
Mounting Type
Surface Mount
Maximum Power Dissipation
700 mW
Minimum DC Current Gain
200
Transistor Configuration
Isolated
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
185 MHz
Pin Count
6
Number of Elements per Chip
2
Dimensions
1 x 3.1 x 1.7mm
Maximum Operating Temperature
+150 °C
Λεπτομέρειες Προϊόντος
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
€ 11,40
€ 0,57 Μονάδας (Σε ένα πακέτο των 20) (Exc. Vat)Χωρίς Φ.Π.Α
€ 14,14
€ 0,707 Μονάδας (Σε ένα πακέτο των 20) Με Φ.Π.Α
Standard
20
€ 11,40
€ 0,57 Μονάδας (Σε ένα πακέτο των 20) (Exc. Vat)Χωρίς Φ.Π.Α
€ 14,14
€ 0,707 Μονάδας (Σε ένα πακέτο των 20) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Standard
20
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
| Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
|---|---|---|
| 20 - 40 | € 0,57 | € 11,40 |
| 60 - 100 | € 0,52 | € 10,40 |
| 120+ | € 0,47 | € 9,40 |
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-1 A
Maximum Collector Emitter Voltage
-60 V
Package Type
TSOP
Mounting Type
Surface Mount
Maximum Power Dissipation
700 mW
Minimum DC Current Gain
200
Transistor Configuration
Isolated
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
185 MHz
Pin Count
6
Number of Elements per Chip
2
Dimensions
1 x 3.1 x 1.7mm
Maximum Operating Temperature
+150 °C
Λεπτομέρειες Προϊόντος
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.


