Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-5 A
Maximum Collector Emitter Voltage
-20 V
Package Type
UPAK
Mounting Type
Surface Mount
Maximum Power Dissipation
2.5 W
Minimum DC Current Gain
300
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
4
Number of Elements per Chip
1
Dimensions
1.6 x 4.6 x 2.6mm
Maximum Operating Temperature
+150 °C
Λεπτομέρειες Προϊόντος
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
€ 5,00
€ 0,50 Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α
€ 6,20
€ 0,62 Μονάδας (Σε ένα πακέτο των 10) Με Φ.Π.Α
Standard
10
€ 5,00
€ 0,50 Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α
€ 6,20
€ 0,62 Μονάδας (Σε ένα πακέτο των 10) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Standard
10
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
---|---|---|
10 - 90 | € 0,50 | € 5,00 |
100 - 190 | € 0,31 | € 3,10 |
200 - 990 | € 0,31 | € 3,10 |
1000 - 1990 | € 0,31 | € 3,10 |
2000+ | € 0,31 | € 3,10 |
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
NexperiaTransistor Type
PNP
Maximum DC Collector Current
-5 A
Maximum Collector Emitter Voltage
-20 V
Package Type
UPAK
Mounting Type
Surface Mount
Maximum Power Dissipation
2.5 W
Minimum DC Current Gain
300
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Pin Count
4
Number of Elements per Chip
1
Dimensions
1.6 x 4.6 x 2.6mm
Maximum Operating Temperature
+150 °C
Λεπτομέρειες Προϊόντος
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.