Nexperia N-Channel MOSFET, 67 A, 30 V, 4-Pin LFPAK, SOT-669 PH8230E,115

Κωδικός Προϊόντος της RS: 509-150Κατασκευαστής: NexperiaΚωδικός Κατασκευαστή: PH8230E,115
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

67 A

Maximum Drain Source Voltage

30 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

62.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

14 nC @ 5 V

Width

4.1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Philippines

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors

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€ 7,45

€ 1,49 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α

€ 9,24

€ 1,848 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α

Nexperia N-Channel MOSFET, 67 A, 30 V, 4-Pin LFPAK, SOT-669 PH8230E,115

€ 7,45

€ 1,49 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α

€ 9,24

€ 1,848 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α

Nexperia N-Channel MOSFET, 67 A, 30 V, 4-Pin LFPAK, SOT-669 PH8230E,115

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

67 A

Maximum Drain Source Voltage

30 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

62.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

14 nC @ 5 V

Width

4.1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Philippines

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more