Dual N-Channel MOSFET, 3.4 A, 30 V, 8-Pin SOIC Nexperia PHN210T,118

Κωδικός Προϊόντος της RS: 725-8376Κατασκευαστής: NexperiaΚωδικός Κατασκευαστή: PHN210T,118
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

3.4 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.8V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

6 nC @ 10 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5mm

Width

4mm

Transistor Material

Si

Minimum Operating Temperature

-65 °C

Height

1.45mm

Χώρα Προέλευσης

Thailand

Λεπτομέρειες Προϊόντος

Dual N-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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P.O.A.

Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α

Dual N-Channel MOSFET, 3.4 A, 30 V, 8-Pin SOIC Nexperia PHN210T,118
Επιλέγξτε συσκευασία

P.O.A.

Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α

Dual N-Channel MOSFET, 3.4 A, 30 V, 8-Pin SOIC Nexperia PHN210T,118

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

3.4 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.8V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

6 nC @ 10 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5mm

Width

4mm

Transistor Material

Si

Minimum Operating Temperature

-65 °C

Height

1.45mm

Χώρα Προέλευσης

Thailand

Λεπτομέρειες Προϊόντος

Dual N-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more