Nexperia PMV16XN N-Channel MOSFET, 8.6 A, 20 V, 3-Pin SOT-23 PMV16XNR

Κωδικός Προϊόντος της RS: 170-4851Κατασκευαστής: NexperiaΚωδικός Κατασκευαστή: PMV16XNR
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

8.6 A

Maximum Drain Source Voltage

20 V

Series

PMV16XN

Package Type

TO-236

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

6.94 W

Transistor Configuration

Single

Maximum Gate Source Voltage

12 V

Number of Elements per Chip

1

Width

1.4mm

Length

3mm

Typical Gate Charge @ Vgs

13.4 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

Χώρα Προέλευσης

China

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€ 540,00

€ 0,18 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 669,60

€ 0,223 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α

Nexperia PMV16XN N-Channel MOSFET, 8.6 A, 20 V, 3-Pin SOT-23 PMV16XNR

€ 540,00

€ 0,18 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 669,60

€ 0,223 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α

Nexperia PMV16XN N-Channel MOSFET, 8.6 A, 20 V, 3-Pin SOT-23 PMV16XNR

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

8.6 A

Maximum Drain Source Voltage

20 V

Series

PMV16XN

Package Type

TO-236

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.9V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

6.94 W

Transistor Configuration

Single

Maximum Gate Source Voltage

12 V

Number of Elements per Chip

1

Width

1.4mm

Length

3mm

Typical Gate Charge @ Vgs

13.4 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1mm

Χώρα Προέλευσης

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more