P-Channel MOSFET, 680 mA, 20 V, 3-Pin SOT-883B Nexperia PMZB670UPE,315

Κωδικός Προϊόντος της RS: 798-2817Κατασκευαστής: NexperiaΚωδικός Κατασκευαστή: PMZB670UPE,315
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

P

Maximum Continuous Drain Current

680 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-883B

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

850 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.3V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

2.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Length

1.05mm

Typical Gate Charge @ Vgs

0.76 nC @ 4.5 V

Width

0.65mm

Transistor Material

Si

Number of Elements per Chip

1

Height

0.36mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

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P.O.A.

Μονάδας (διαθέσιμο σε μία ταινία) (Exc. Vat)Χωρίς Φ.Π.Α

P-Channel MOSFET, 680 mA, 20 V, 3-Pin SOT-883B Nexperia PMZB670UPE,315
Επιλέγξτε συσκευασία

P.O.A.

Μονάδας (διαθέσιμο σε μία ταινία) (Exc. Vat)Χωρίς Φ.Π.Α

P-Channel MOSFET, 680 mA, 20 V, 3-Pin SOT-883B Nexperia PMZB670UPE,315

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

P

Maximum Continuous Drain Current

680 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-883B

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

850 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.3V

Minimum Gate Threshold Voltage

0.5V

Maximum Power Dissipation

2.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maximum Operating Temperature

+150 °C

Length

1.05mm

Typical Gate Charge @ Vgs

0.76 nC @ 4.5 V

Width

0.65mm

Transistor Material

Si

Number of Elements per Chip

1

Height

0.36mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

P-Channel MOSFET, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more