Nexperia N-Channel MOSFET, 24 A, 80 V, 4-Pin LFPAK, SOT-669 PSMN045-80YS,115

Κωδικός Προϊόντος της RS: 798-2889PΚατασκευαστής: NexperiaΚωδικός Κατασκευαστή: PSMN045-80YS,115
brand-logo
Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

80 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

72 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

56 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.1mm

Transistor Material

Si

Length

5mm

Typical Gate Charge @ Vgs

12.5 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 60V to 80V, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

P.O.A.

Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

Nexperia N-Channel MOSFET, 24 A, 80 V, 4-Pin LFPAK, SOT-669 PSMN045-80YS,115
Επιλέγξτε συσκευασία

P.O.A.

Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

Nexperia N-Channel MOSFET, 24 A, 80 V, 4-Pin LFPAK, SOT-669 PSMN045-80YS,115

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

80 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

72 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

56 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.1mm

Transistor Material

Si

Length

5mm

Typical Gate Charge @ Vgs

12.5 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 60V to 80V, Nexperia

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more