Nexperia N-Channel MOSFET, 100 A, 25 V, 4-Pin LFPAK, SOT-669 PSMN0R9-25YLC,115

Κωδικός Προϊόντος της RS: 798-2895Κατασκευαστής: NexperiaΚωδικός Κατασκευαστή: PSMN0R9-25YLC,115
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

25 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

1.25 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.95V

Minimum Gate Threshold Voltage

1.05V

Maximum Power Dissipation

272 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

110 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 8,61

€ 2,87 Μονάδας (Σε ένα πακέτο των 3) (Exc. Vat)Χωρίς Φ.Π.Α

€ 10,68

€ 3,559 Μονάδας (Σε ένα πακέτο των 3) Με Φ.Π.Α

Nexperia N-Channel MOSFET, 100 A, 25 V, 4-Pin LFPAK, SOT-669 PSMN0R9-25YLC,115
Επιλέγξτε συσκευασία

€ 8,61

€ 2,87 Μονάδας (Σε ένα πακέτο των 3) (Exc. Vat)Χωρίς Φ.Π.Α

€ 10,68

€ 3,559 Μονάδας (Σε ένα πακέτο των 3) Με Φ.Π.Α

Nexperia N-Channel MOSFET, 100 A, 25 V, 4-Pin LFPAK, SOT-669 PSMN0R9-25YLC,115
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Quantity ΠοσότηταΤιμή μονάδαςPer Πακέτο
3 - 27€ 2,87€ 8,61
30 - 72€ 2,69€ 8,07
75 - 147€ 2,56€ 7,68
150 - 297€ 2,40€ 7,20
300+€ 2,24€ 6,72

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

25 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

1.25 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.95V

Minimum Gate Threshold Voltage

1.05V

Maximum Power Dissipation

272 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5mm

Typical Gate Charge @ Vgs

110 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more