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Nexperia N-Channel MOSFET, 76 A, 30 V, 4-Pin LFPAK, SOT-669 PSMN7R0-30YL,115

RS Stock No.: 165-9987Brand: NexperiaManufacturers Part No.: PSMN7R0-30YL
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

76 A

Maximum Drain Source Voltage

30 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.15V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

51 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.1mm

Length

5mm

Typical Gate Charge @ Vgs

22 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

1.1mm

Country of Origin

Philippines

Product details

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors

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Stock information temporarily unavailable.

€ 855.00

€ 0.57 Each (On a Reel of 1500) (Exc. Vat)

€ 1,060.20

€ 0.707 Each (On a Reel of 1500) (inc. VAT)

Nexperia N-Channel MOSFET, 76 A, 30 V, 4-Pin LFPAK, SOT-669 PSMN7R0-30YL,115

€ 855.00

€ 0.57 Each (On a Reel of 1500) (Exc. Vat)

€ 1,060.20

€ 0.707 Each (On a Reel of 1500) (inc. VAT)

Nexperia N-Channel MOSFET, 76 A, 30 V, 4-Pin LFPAK, SOT-669 PSMN7R0-30YL,115
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

76 A

Maximum Drain Source Voltage

30 V

Package Type

LFPAK, SOT-669

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

7 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.15V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

51 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.1mm

Length

5mm

Typical Gate Charge @ Vgs

22 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Height

1.1mm

Country of Origin

Philippines

Product details

N-Channel MOSFET, up to 30V

MOSFET Transistors, NXP Semiconductors

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more