N-Channel MOSFET, 19 A, 650 V, 3-Pin TO-220 onsemi FCP165N65S3

Κωδικός Προϊόντος της RS: 178-4243Κατασκευαστής: onsemiΚωδικός Κατασκευαστή: FCP165N65S3
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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

154 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Typical Gate Charge @ Vgs

39 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

10.67mm

Width

4.7mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

16.3mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

China

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 3,33

Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α

€ 4,129

Μονάδας (Σε μία ράγα των 50) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 19 A, 650 V, 3-Pin TO-220 onsemi FCP165N65S3

€ 3,33

Μονάδας (Σε μία ράγα των 50) (Exc. Vat)Χωρίς Φ.Π.Α

€ 4,129

Μονάδας (Σε μία ράγα των 50) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 19 A, 650 V, 3-Pin TO-220 onsemi FCP165N65S3
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

154 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Typical Gate Charge @ Vgs

39 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

10.67mm

Width

4.7mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

16.3mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more