N-Channel MOSFET, 51 A, 80 V, 8-Pin Power33 onsemi FDMC010N08C

Κωδικός Προϊόντος της RS: 178-4250Κατασκευαστής: onsemiΚωδικός Κατασκευαστή: FDMC010N08C
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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

51 A

Maximum Drain Source Voltage

80 V

Package Type

Power33

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

10 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

3.4mm

Maximum Operating Temperature

+150 °C

Length

3.4mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Height

0.75mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Χώρα Προέλευσης

Philippines

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

P.O.A.

N-Channel MOSFET, 51 A, 80 V, 8-Pin Power33 onsemi FDMC010N08C

3000

Διατίθεται σε πολλαπλάσια από 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

P.O.A.

N-Channel MOSFET, 51 A, 80 V, 8-Pin Power33 onsemi FDMC010N08C
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

3000

Διατίθεται σε πολλαπλάσια από 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

51 A

Maximum Drain Source Voltage

80 V

Package Type

Power33

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

10 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

3.4mm

Maximum Operating Temperature

+150 °C

Length

3.4mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Height

0.75mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Χώρα Προέλευσης

Philippines

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more