N-Channel MOSFET, 124 A, 100 V, 8-Pin PQFN8 onsemi FDMS86181

Κωδικός Προϊόντος της RS: 181-1857Κατασκευαστής: onsemiΚωδικός Κατασκευαστή: FDMS86181
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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

124 A

Maximum Drain Source Voltage

100 V

Package Type

PQFN8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

12 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

5mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

42 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

5.85mm

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Χώρα Προέλευσης

Philippines

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 2,04

Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 2,53

Μονάδας (Σε ένα καρούλι των 3000) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 124 A, 100 V, 8-Pin PQFN8 onsemi FDMS86181

€ 2,04

Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 2,53

Μονάδας (Σε ένα καρούλι των 3000) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 124 A, 100 V, 8-Pin PQFN8 onsemi FDMS86181
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

124 A

Maximum Drain Source Voltage

100 V

Package Type

PQFN8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

12 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Width

5mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

42 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

5.85mm

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.3V

Χώρα Προέλευσης

Philippines

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more