onsemi FGH75T65SQDTL4, P-Channel IGBT, 150 A 650 V, 4-Pin TO-247, Through Hole
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
ON SemiconductorMaximum Continuous Collector Current
150 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
375 W
Number of Transistors
1
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
P
Pin Count
4
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.8 x 5.2 x 22.74mm
Minimum Operating Temperature
-55 °C
Gate Capacitance
4845pF
Maximum Operating Temperature
+175 °C
Energy Rating
160mJ
Χώρα Προέλευσης
China
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P.O.A.
450
P.O.A.
450
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
ON SemiconductorMaximum Continuous Collector Current
150 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
375 W
Number of Transistors
1
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
P
Pin Count
4
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
15.8 x 5.2 x 22.74mm
Minimum Operating Temperature
-55 °C
Gate Capacitance
4845pF
Maximum Operating Temperature
+175 °C
Energy Rating
160mJ
Χώρα Προέλευσης
China