onsemi NGTG15N60S1EG IGBT, 30 A 600 V, 3-Pin TO-220, Through Hole
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
ON SemiconductorMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
117 W
Package Type
TO-220
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.28 x 4.82 x 15.75mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
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P.O.A.
2
P.O.A.
2
Ideate. Create. Collaborate
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
ON SemiconductorMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
117 W
Package Type
TO-220
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
10.28 x 4.82 x 15.75mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products