N-Channel MOSFET, 19 A, 100 V, 3-Pin DPAK onsemi NTD6416ANLG
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
71 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
25 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.38mm
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P.O.A.
2
P.O.A.
2
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
19 A
Maximum Drain Source Voltage
100 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
80 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Maximum Power Dissipation
71 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
25 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.73mm
Width
6.22mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.38mm