N-Channel MOSFET, 68 A, 80 V, 8-Pin WDFN onsemi NTTFS6H850NTAG

Κωδικός Προϊόντος της RS: 178-4317Κατασκευαστής: onsemiΚωδικός Κατασκευαστή: NTTFS6H850NTAG
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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

68 A

Maximum Drain Source Voltage

80 V

Package Type

WDFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Length

3.15mm

Typical Gate Charge @ Vgs

3.6 nC @ 10 V

Width

3.15mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Height

0.75mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Χώρα Προέλευσης

Malaysia

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 1,51

Μονάδας (Σε ένα καρούλι των 1500) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1,872

Μονάδας (Σε ένα καρούλι των 1500) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 68 A, 80 V, 8-Pin WDFN onsemi NTTFS6H850NTAG

€ 1,51

Μονάδας (Σε ένα καρούλι των 1500) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1,872

Μονάδας (Σε ένα καρούλι των 1500) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 68 A, 80 V, 8-Pin WDFN onsemi NTTFS6H850NTAG
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

68 A

Maximum Drain Source Voltage

80 V

Package Type

WDFN

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

9.5 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Length

3.15mm

Typical Gate Charge @ Vgs

3.6 nC @ 10 V

Width

3.15mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Height

0.75mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Χώρα Προέλευσης

Malaysia

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more