N-Channel MOSFET, 237 A, 40 V, 5-Pin DFN onsemi NVMFS5C426NLT1G

Κωδικός Προϊόντος της RS: 178-4302Κατασκευαστής: onsemiΚωδικός Κατασκευαστή: NVMFS5C426NLT1G
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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

237 A

Maximum Drain Source Voltage

40 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

1.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

128 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Length

5.1mm

Typical Gate Charge @ Vgs

44 nC @ 4.5 V

Width

6.1mm

Number of Elements per Chip

1

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Χώρα Προέλευσης

Malaysia

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 3,05

Μονάδας (Σε ένα καρούλι των 1500) (Exc. Vat)Χωρίς Φ.Π.Α

€ 3,782

Μονάδας (Σε ένα καρούλι των 1500) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 237 A, 40 V, 5-Pin DFN onsemi NVMFS5C426NLT1G

€ 3,05

Μονάδας (Σε ένα καρούλι των 1500) (Exc. Vat)Χωρίς Φ.Π.Α

€ 3,782

Μονάδας (Σε ένα καρούλι των 1500) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 237 A, 40 V, 5-Pin DFN onsemi NVMFS5C426NLT1G
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

237 A

Maximum Drain Source Voltage

40 V

Package Type

DFN

Mounting Type

Surface Mount

Pin Count

5

Maximum Drain Source Resistance

1.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

128 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+175 °C

Length

5.1mm

Typical Gate Charge @ Vgs

44 nC @ 4.5 V

Width

6.1mm

Number of Elements per Chip

1

Height

1.05mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Χώρα Προέλευσης

Malaysia

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more