Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
17 A
Maximum Collector Emitter Voltage
250 V
Package Type
TO-264
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
80
Transistor Configuration
Single
Maximum Collector Base Voltage
250 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
30 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
20 x 5 x 26mm
Λεπτομέρειες Προϊόντος
Power NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
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Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 6,43
Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α
€ 7,973
Μονάδας (Σε ένα πακέτο των 5) (Including VAT) Με Φ.Π.Α
5
€ 6,43
Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α
€ 7,973
Μονάδας (Σε ένα πακέτο των 5) (Including VAT) Με Φ.Π.Α
5
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
17 A
Maximum Collector Emitter Voltage
250 V
Package Type
TO-264
Mounting Type
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
80
Transistor Configuration
Single
Maximum Collector Base Voltage
250 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
30 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
20 x 5 x 26mm
Λεπτομέρειες Προϊόντος
Power NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.