N-Channel MOSFET, 340 mA, 60 V, 3-Pin SOT-323 onsemi 2V7002WT1G

Κωδικός Προϊόντος της RS: 790-5246Κατασκευαστής: onsemiΚωδικός Κατασκευαστή: 2V7002WT1G
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

340 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

330 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.35mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

0.7 nC @ 4.5 V

Height

0.9mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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N-Channel MOSFET, 320 mA, 60 V, 3-Pin SOT-323 Nexperia BSS138PW,115
€ 0,062Μονάδας (Σε ένα καρούλι των 100) (Exc. Vat)Χωρίς Φ.Π.Α

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N-Channel MOSFET, 340 mA, 60 V, 3-Pin SOT-323 onsemi 2V7002WT1G
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P.O.A.

N-Channel MOSFET, 340 mA, 60 V, 3-Pin SOT-323 onsemi 2V7002WT1G
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
N-Channel MOSFET, 320 mA, 60 V, 3-Pin SOT-323 Nexperia BSS138PW,115
€ 0,062Μονάδας (Σε ένα καρούλι των 100) (Exc. Vat)Χωρίς Φ.Π.Α

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

340 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-323

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

330 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.35mm

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

2.2mm

Typical Gate Charge @ Vgs

0.7 nC @ 4.5 V

Height

0.9mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
N-Channel MOSFET, 320 mA, 60 V, 3-Pin SOT-323 Nexperia BSS138PW,115
€ 0,062Μονάδας (Σε ένα καρούλι των 100) (Exc. Vat)Χωρίς Φ.Π.Α