onsemi N-Channel MOSFET, 44 A, 650 V, 3-Pin D2PAK FCB070N65S3
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
44 A
Maximum Drain Source Voltage
650 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
312 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Width
9.65mm
Length
10.67mm
Typical Gate Charge @ Vgs
78 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
4.83mm
Χώρα Προέλευσης
China
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P.O.A.
Μονάδας (Σε ένα καρούλι των 1600) (Exc. Vat)Χωρίς Φ.Π.Α
1600
P.O.A.
Μονάδας (Σε ένα καρούλι των 1600) (Exc. Vat)Χωρίς Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
1600
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Ideate. Create. Collaborate
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
44 A
Maximum Drain Source Voltage
650 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
312 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Number of Elements per Chip
1
Width
9.65mm
Length
10.67mm
Typical Gate Charge @ Vgs
78 nC @ 10 V
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Height
4.83mm
Χώρα Προέλευσης
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products