N-Channel MOSFET, 75 A, 650 V, 4-Pin TO-247-4 onsemi FCH023N65S3L4

Κωδικός Προϊόντος της RS: 172-3421Κατασκευαστής: onsemiΚωδικός Κατασκευαστή: FCH023N65S3L4
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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

595 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Length

15.8mm

Typical Gate Charge @ Vgs

222 nC @ 10 V

Width

5.2mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

22.74mm

Forward Diode Voltage

1.2V

Χώρα Προέλευσης

China

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 26,59

Μονάδας (Σε μία ράγα των 450) (Exc. Vat)Χωρίς Φ.Π.Α

€ 32,972

Μονάδας (Σε μία ράγα των 450) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 75 A, 650 V, 4-Pin TO-247-4 onsemi FCH023N65S3L4

€ 26,59

Μονάδας (Σε μία ράγα των 450) (Exc. Vat)Χωρίς Φ.Π.Α

€ 32,972

Μονάδας (Σε μία ράγα των 450) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 75 A, 650 V, 4-Pin TO-247-4 onsemi FCH023N65S3L4
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

650 V

Package Type

TO-247-4

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

595 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Length

15.8mm

Typical Gate Charge @ Vgs

222 nC @ 10 V

Width

5.2mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

22.74mm

Forward Diode Voltage

1.2V

Χώρα Προέλευσης

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more