N-Channel MOSFET, 19 A, 500 V, 3-Pin TO-3PN onsemi FDA18N50

Κωδικός Προϊόντος της RS: 671-4777Κατασκευαστής: onsemiΚωδικός Κατασκευαστή: FDA18N50
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

500 V

Package Type

TO-3PN

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

265 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

239 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

15.8mm

Width

5mm

Typical Gate Charge @ Vgs

45 nC @ 10 V

Number of Elements per Chip

1

Transistor Material

Si

Series

UniFET

Minimum Operating Temperature

-55 °C

Height

18.9mm

Λεπτομέρειες Προϊόντος

UniFET™ N-Channel MOSFET, Fairchild Semiconductor

UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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P.O.A.

N-Channel MOSFET, 19 A, 500 V, 3-Pin TO-3PN onsemi FDA18N50
Επιλέγξτε συσκευασία

Standard

Επιλέγξτε συσκευασία

Standard - each

Διατίθεται σε πολλαπλάσια από 1.

Παραγωγή -

Διατίθεται σε πολλαπλάσια από 1.

Συνιστάται για παραγγελίες σε μεγάλες ποσότητες. Τα είδη συσκευάζονται έτοιμα για εισαγωγή σε μηχανήματα, επιτρέποντάς σας να βελτιώσετε την αποδοτικότητα της παραγωγής

1

Διατίθεται σε πολλαπλάσια από 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

N-Channel MOSFET, 19 A, 500 V, 3-Pin TO-3PN onsemi FDA18N50
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Standard

Επιλέγξτε συσκευασία

Standard - each

Διατίθεται σε πολλαπλάσια από 1.

Παραγωγή -

Διατίθεται σε πολλαπλάσια από 1.

Συνιστάται για παραγγελίες σε μεγάλες ποσότητες. Τα είδη συσκευάζονται έτοιμα για εισαγωγή σε μηχανήματα, επιτρέποντάς σας να βελτιώσετε την αποδοτικότητα της παραγωγής

1

Διατίθεται σε πολλαπλάσια από 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

500 V

Package Type

TO-3PN

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

265 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

239 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

15.8mm

Width

5mm

Typical Gate Charge @ Vgs

45 nC @ 10 V

Number of Elements per Chip

1

Transistor Material

Si

Series

UniFET

Minimum Operating Temperature

-55 °C

Height

18.9mm

Λεπτομέρειες Προϊόντος

UniFET™ N-Channel MOSFET, Fairchild Semiconductor

UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more