onsemi Isolated PowerTrench 2 Type P, Type N-Channel MOSFET, 2.5 A, 30 V Enhancement, 6-Pin SOT-23 FDC6333C

Κωδικός Προϊόντος της RS: 739-0164Κατασκευαστής: onsemiΚωδικός Κατασκευαστή: FDC6333C
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Product Type

MOSFET

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

2.5A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-23

Series

PowerTrench

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

220mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

960mW

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

4.7nC

Forward Voltage Vf

0.8V

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Height

1mm

Length

3mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

Λεπτομέρειες Προϊόντος

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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Προβολή όλων σε MOSFETs

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 5,85

€ 1,17 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α

€ 7,25

€ 1,451 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α

onsemi Isolated PowerTrench 2 Type P, Type N-Channel MOSFET, 2.5 A, 30 V Enhancement, 6-Pin SOT-23 FDC6333C
Επιλέγξτε συσκευασία

€ 5,85

€ 1,17 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α

€ 7,25

€ 1,451 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α

onsemi Isolated PowerTrench 2 Type P, Type N-Channel MOSFET, 2.5 A, 30 V Enhancement, 6-Pin SOT-23 FDC6333C

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Quantity ΠοσότηταΤιμή μονάδαςPer Πακέτο
5 - 45€ 1,17€ 5,85
50 - 145€ 1,12€ 5,60
150 - 745€ 0,97€ 4,85
750 - 1495€ 0,91€ 4,55
1500+€ 0,86€ 4,30

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Product Type

MOSFET

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

2.5A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-23

Series

PowerTrench

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

220mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

960mW

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

4.7nC

Forward Voltage Vf

0.8V

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Height

1mm

Length

3mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

Λεπτομέρειες Προϊόντος

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more