Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
40 V
Series
PowerTrench
Package Type
MicroFET 2 x 2
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
19 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.4 W, 900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.75mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
€ 8,40
€ 0,84 Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α
€ 10,42
€ 1,042 Μονάδας (Σε ένα πακέτο των 10) Με Φ.Π.Α
Standard
10
€ 8,40
€ 0,84 Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α
€ 10,42
€ 1,042 Μονάδας (Σε ένα πακέτο των 10) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Standard
10
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
| Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
|---|---|---|
| 10 - 40 | € 0,84 | € 8,40 |
| 50 - 90 | € 0,81 | € 8,10 |
| 100 - 240 | € 0,81 | € 8,10 |
| 250 - 490 | € 0,81 | € 8,10 |
| 500+ | € 0,78 | € 7,80 |
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
40 V
Series
PowerTrench
Package Type
MicroFET 2 x 2
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
19 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.4 W, 900 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2mm
Typical Gate Charge @ Vgs
14 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
0.75mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
PowerTrench® N-Channel MOSFET, 10A to 19.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.


