onsemi PowerTrench Dual N/P-Channel-Channel MOSFET, 7.3 A, 8.6 A, 30 V, 8-Pin SOIC FDS8858CZ

Κωδικός Προϊόντος της RS: 671-0719PΚατασκευαστής: onsemiΚωδικός Κατασκευαστή: FDS8858CZ
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N, P

Maximum Continuous Drain Current

7.3 A, 8.6 A

Maximum Drain Source Voltage

30 V

Series

PowerTrench

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17 mΩ, 21 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.6 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-25 V, -20 V, +20 V, +25 V

Typical Gate Charge @ Vgs

17 nC @ 10 V, 33 nC @ 10 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

2

Length

5mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.5mm

Λεπτομέρειες Προϊόντος

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 78,50

€ 1,57 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

€ 97,34

€ 1,947 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α

onsemi PowerTrench Dual N/P-Channel-Channel MOSFET, 7.3 A, 8.6 A, 30 V, 8-Pin SOIC FDS8858CZ
Επιλέγξτε συσκευασία

€ 78,50

€ 1,57 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

€ 97,34

€ 1,947 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α

onsemi PowerTrench Dual N/P-Channel-Channel MOSFET, 7.3 A, 8.6 A, 30 V, 8-Pin SOIC FDS8858CZ
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Quantity ΠοσότηταΤιμή μονάδαςPer Καρούλι
50 - 95€ 1,57€ 7,85
100 - 495€ 1,36€ 6,80
500 - 995€ 1,23€ 6,15
1000+€ 1,12€ 5,60

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N, P

Maximum Continuous Drain Current

7.3 A, 8.6 A

Maximum Drain Source Voltage

30 V

Series

PowerTrench

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17 mΩ, 21 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.6 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-25 V, -20 V, +20 V, +25 V

Typical Gate Charge @ Vgs

17 nC @ 10 V, 33 nC @ 10 V

Width

4mm

Transistor Material

Si

Number of Elements per Chip

2

Length

5mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.5mm

Λεπτομέρειες Προϊόντος

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more