P-Channel MOSFET, 460 mA, 25 V, 3-Pin SOT-23 onsemi FDV304P
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
460 mA
Maximum Drain Source Voltage
25 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
+8 V
Transistor Material
Si
Typical Gate Charge @ Vgs
1.1 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.92mm
Width
1.3mm
Minimum Operating Temperature
-55 °C
Height
0.93mm
Λεπτομέρειες Προϊόντος
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 0,20
Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 0,25
Μονάδας Με Φ.Π.Α
Standard
1
€ 0,20
Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α
€ 0,25
Μονάδας Με Φ.Π.Α
Standard
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
460 mA
Maximum Drain Source Voltage
25 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.1 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
+8 V
Transistor Material
Si
Typical Gate Charge @ Vgs
1.1 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.92mm
Width
1.3mm
Minimum Operating Temperature
-55 °C
Height
0.93mm
Λεπτομέρειες Προϊόντος
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products