Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-223
Series
QFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.05 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
6.3 nC @ 10 V
Width
3.56mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Height
1.6mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
QFET® P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductors new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
€ 44,50
€ 0,89 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α
€ 55,18
€ 1,104 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α
Συσκευασία Παραγωγής (Καρούλι)
50
€ 44,50
€ 0,89 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α
€ 55,18
€ 1,104 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Συσκευασία Παραγωγής (Καρούλι)
50
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
| Quantity Ποσότητα | Τιμή μονάδας | Per Καρούλι |
|---|---|---|
| 50 - 95 | € 0,89 | € 4,45 |
| 100 - 495 | € 0,78 | € 3,90 |
| 500 - 995 | € 0,70 | € 3,50 |
| 1000+ | € 0,65 | € 3,25 |
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1 A
Maximum Drain Source Voltage
100 V
Package Type
SOT-223
Series
QFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.05 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
6.3 nC @ 10 V
Width
3.56mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Height
1.6mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
QFET® P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductors new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.


