onsemi HGT1S10N120BNST IGBT, 80 A 1200 V, 3-Pin D2PAK (TO-263), Surface Mount
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
onsemiMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
298 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
10.67 x 11.33 x 4.83mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Λεπτομέρειες Προϊόντος
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 5,42
Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α
€ 6,721
Μονάδας (διαθέσιμο σε ένα καρούλι) (Including VAT) Με Φ.Π.Α
2
€ 5,42
Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α
€ 6,721
Μονάδας (διαθέσιμο σε ένα καρούλι) (Including VAT) Με Φ.Π.Α
2
Αγοράστε μαζικά
| Quantity Ποσότητα | Τιμή μονάδας | Per Καρούλι |
|---|---|---|
| 2 - 6 | € 5,42 | € 10,84 |
| 8 - 38 | € 4,89 | € 9,78 |
| 40 - 198 | € 4,41 | € 8,82 |
| 200 - 398 | € 3,88 | € 7,76 |
| 400+ | € 3,43 | € 6,86 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
onsemiMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
298 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
10.67 x 11.33 x 4.83mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Λεπτομέρειες Προϊόντος
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products