onsemi ISL9V3040D3ST, Type N-Channel Ignition IGBT, 21 A 430 V, 3-Pin TO-252, Surface
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
onsemiProduct Type
Ignition IGBT
Maximum Continuous Collector Current Ic
21A
Maximum Collector Emitter Voltage Vceo
430V
Maximum Power Dissipation Pd
150W
Package Type
TO-252
Mount Type
Surface
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±10 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.2V
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Standards/Approvals
RoHS
Series
EcoSPARK
Energy Rating
300mJ
Automotive Standard
AEC-Q101
Λεπτομέρειες Προϊόντος
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
€ 176,00
€ 3,52 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α
€ 218,24
€ 4,365 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α
Συσκευασία Παραγωγής (Καρούλι)
50
€ 176,00
€ 3,52 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α
€ 218,24
€ 4,365 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Συσκευασία Παραγωγής (Καρούλι)
50
| Quantity Ποσότητα | Τιμή μονάδας | Per Καρούλι |
|---|---|---|
| 50 - 95 | € 3,52 | € 17,60 |
| 100 - 495 | € 3,08 | € 15,40 |
| 500 - 995 | € 2,77 | € 13,85 |
| 1000+ | € 2,56 | € 12,80 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
onsemiProduct Type
Ignition IGBT
Maximum Continuous Collector Current Ic
21A
Maximum Collector Emitter Voltage Vceo
430V
Maximum Power Dissipation Pd
150W
Package Type
TO-252
Mount Type
Surface
Channel Type
Type N
Pin Count
3
Switching Speed
1MHz
Maximum Gate Emitter Voltage VGEO
±10 V
Maximum Collector Emitter Saturation Voltage VceSAT
2.2V
Minimum Operating Temperature
-40°C
Maximum Operating Temperature
175°C
Standards/Approvals
RoHS
Series
EcoSPARK
Energy Rating
300mJ
Automotive Standard
AEC-Q101
Λεπτομέρειες Προϊόντος
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products