onsemi 60V 6A, Dual Silicon Junction Diode, 3-Pin DPAK MBRD660CTG
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
onsemiMounting Type
Surface Mount
Package Type
DPAK (TO-252)
Maximum Continuous Forward Current
6A
Peak Reverse Repetitive Voltage
60V
Diode Configuration
Common Cathode
Rectifier Type
Switching
Diode Type
Silicon Junction
Pin Count
3
Maximum Forward Voltage Drop
850mV
Number of Elements per Chip
2
Diode Technology
Silicon Junction
Peak Non-Repetitive Forward Surge Current
75A
Λεπτομέρειες Προϊόντος
ON Semiconductor Schottky Barrier Diodes
This ON Semiconductor Schottky power rectifier employs the Schottky barrier principle using a barrier metal to create the best forward voltage drop−reverse current exchange. Suitable for low voltage, high-frequency rectification as well as a freewheeling and polarity protection diode in a range of surface mount applications wherever a more compact size and weight are key.
Standards
Products with NSV-, SBR- or S-prefixed Manufacturer Part Nos are AEC-Q101 automotive qualified.
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P.O.A.
Μονάδας (διαθέσιμο σε μία ταινία) (Exc. Vat)Χωρίς Φ.Π.Α
Standard
10
P.O.A.
Μονάδας (διαθέσιμο σε μία ταινία) (Exc. Vat)Χωρίς Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Standard
10
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
onsemiMounting Type
Surface Mount
Package Type
DPAK (TO-252)
Maximum Continuous Forward Current
6A
Peak Reverse Repetitive Voltage
60V
Diode Configuration
Common Cathode
Rectifier Type
Switching
Diode Type
Silicon Junction
Pin Count
3
Maximum Forward Voltage Drop
850mV
Number of Elements per Chip
2
Diode Technology
Silicon Junction
Peak Non-Repetitive Forward Surge Current
75A
Λεπτομέρειες Προϊόντος
ON Semiconductor Schottky Barrier Diodes
This ON Semiconductor Schottky power rectifier employs the Schottky barrier principle using a barrier metal to create the best forward voltage drop−reverse current exchange. Suitable for low voltage, high-frequency rectification as well as a freewheeling and polarity protection diode in a range of surface mount applications wherever a more compact size and weight are key.
Standards
Products with NSV-, SBR- or S-prefixed Manufacturer Part Nos are AEC-Q101 automotive qualified.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products