onsemi N-Channel MOSFET, 18 A, 60 V, 3-Pin DPAK NTD18N06LT4G

Κωδικός Προϊόντος της RS: 773-7875Κατασκευαστής: onsemiΚωδικός Κατασκευαστή: NTD18N06LT4G
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

55 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

11 nC @ 5 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Width

6.22mm

Minimum Operating Temperature

-55 °C

Height

2.38mm

Λεπτομέρειες Προϊόντος

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 7,55

€ 1,51 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α

€ 9,36

€ 1,872 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α

onsemi N-Channel MOSFET, 18 A, 60 V, 3-Pin DPAK NTD18N06LT4G
Επιλέγξτε συσκευασία

€ 7,55

€ 1,51 Μονάδας (Σε ένα πακέτο των 5) (Exc. Vat)Χωρίς Φ.Π.Α

€ 9,36

€ 1,872 Μονάδας (Σε ένα πακέτο των 5) Με Φ.Π.Α

onsemi N-Channel MOSFET, 18 A, 60 V, 3-Pin DPAK NTD18N06LT4G

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Πακέτο
5 - 45€ 1,51€ 7,55
50 - 95€ 1,31€ 6,55
100 - 495€ 1,15€ 5,75
500 - 995€ 1,02€ 5,10
1000+€ 0,94€ 4,70

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JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

55 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

11 nC @ 5 V

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Width

6.22mm

Minimum Operating Temperature

-55 °C

Height

2.38mm

Λεπτομέρειες Προϊόντος

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more