P-Channel MOSFET, 12 A, 60 V, 3-Pin DPAK onsemi NTD2955TG

Κωδικός Προϊόντος της RS: 124-5400Κατασκευαστής: onsemiΚωδικός Κατασκευαστή: NTD2955T4G
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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

55 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.73mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Height

2.38mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Czech Republic

Λεπτομέρειες Προϊόντος

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 0,81

Μονάδας (Σε ένα καρούλι των 2500) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1,004

Μονάδας (Σε ένα καρούλι των 2500) (Including VAT) Με Φ.Π.Α

P-Channel MOSFET, 12 A, 60 V, 3-Pin DPAK onsemi NTD2955TG

€ 0,81

Μονάδας (Σε ένα καρούλι των 2500) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1,004

Μονάδας (Σε ένα καρούλι των 2500) (Including VAT) Με Φ.Π.Α

P-Channel MOSFET, 12 A, 60 V, 3-Pin DPAK onsemi NTD2955TG
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

60 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

55 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

6.73mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Height

2.38mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Czech Republic

Λεπτομέρειες Προϊόντος

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more