P-Channel MOSFET, 760 mA, 20 V, 3-Pin SOT-523 onsemi NTE4151PT1G

Κωδικός Προϊόντος της RS: 124-5403Κατασκευαστής: onsemiΚωδικός Κατασκευαστή: NTE4151PT1G
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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

760 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-523 (SC-89)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

310 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-6 V, +6 V

Width

0.95mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

1.7mm

Typical Gate Charge @ Vgs

2.1 nC @ 5 V

Height

0.8mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

P-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 0,15

Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,186

Μονάδας (Σε ένα καρούλι των 3000) (Including VAT) Με Φ.Π.Α

P-Channel MOSFET, 760 mA, 20 V, 3-Pin SOT-523 onsemi NTE4151PT1G

€ 0,15

Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,186

Μονάδας (Σε ένα καρούλι των 3000) (Including VAT) Με Φ.Π.Α

P-Channel MOSFET, 760 mA, 20 V, 3-Pin SOT-523 onsemi NTE4151PT1G
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

760 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-523 (SC-89)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

310 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-6 V, +6 V

Width

0.95mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

1.7mm

Typical Gate Charge @ Vgs

2.1 nC @ 5 V

Height

0.8mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

P-Channel Power MOSFET, 20V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more