onsemi N-Channel MOSFET, 3 A, 60 V, 3-Pin SOT-223 NTF3055L108T1G

Κωδικός Προϊόντος της RS: 463-307Κατασκευαστής: onsemiΚωδικός Κατασκευαστή: NTF3055L108T1G
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

7.6 nC @ 5 V

Width

3.5mm

Height

1.57mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 16,80

€ 0,84 Μονάδας (Σε ένα πακέτο των 20) (Exc. Vat)Χωρίς Φ.Π.Α

€ 20,83

€ 1,042 Μονάδας (Σε ένα πακέτο των 20) Με Φ.Π.Α

onsemi N-Channel MOSFET, 3 A, 60 V, 3-Pin SOT-223 NTF3055L108T1G
Επιλέγξτε συσκευασία

€ 16,80

€ 0,84 Μονάδας (Σε ένα πακέτο των 20) (Exc. Vat)Χωρίς Φ.Π.Α

€ 20,83

€ 1,042 Μονάδας (Σε ένα πακέτο των 20) Με Φ.Π.Α

onsemi N-Channel MOSFET, 3 A, 60 V, 3-Pin SOT-223 NTF3055L108T1G

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Πακέτο
20 - 180€ 0,84€ 16,80
200 - 480€ 0,73€ 14,60
500+€ 0,63€ 12,60

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

60 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +15 V

Transistor Material

Si

Number of Elements per Chip

1

Length

6.5mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

7.6 nC @ 5 V

Width

3.5mm

Height

1.57mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more