P-Channel MOSFET, 2.9 A, 30 V, 3-Pin SOT-223 onsemi NTF5P03G

Κωδικός Προϊόντος της RS: 802-1478Κατασκευαστής: onsemiΚωδικός Κατασκευαστή: NTF5P03T3G
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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

2.9 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

3.13 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.7mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Width

3.7mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.65mm

Λεπτομέρειες Προϊόντος

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 1,03

Μονάδας (Σε ένα πακέτο των 25) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1,277

Μονάδας (Σε ένα πακέτο των 25) (Including VAT) Με Φ.Π.Α

P-Channel MOSFET, 2.9 A, 30 V, 3-Pin SOT-223 onsemi NTF5P03G
Επιλέγξτε συσκευασία

€ 1,03

Μονάδας (Σε ένα πακέτο των 25) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1,277

Μονάδας (Σε ένα πακέτο των 25) (Including VAT) Με Φ.Π.Α

P-Channel MOSFET, 2.9 A, 30 V, 3-Pin SOT-223 onsemi NTF5P03G
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

2.9 A

Maximum Drain Source Voltage

30 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

3.13 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

6.7mm

Typical Gate Charge @ Vgs

15 nC @ 10 V

Width

3.7mm

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.65mm

Λεπτομέρειες Προϊόντος

P-Channel Power MOSFET, 30V to 500V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more