onsemi Dual P-Channel MOSFET, 4.1 A, 20 V, 8-Pin ChipFET NTHD4102PT1G

Κωδικός Προϊόντος της RS: 780-0589Κατασκευαστής: onsemiΚωδικός Κατασκευαστή: NTHD4102PT1G
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

4.1 A

Maximum Drain Source Voltage

20 V

Package Type

ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Width

1.7mm

Transistor Material

Si

Number of Elements per Chip

2

Length

3.1mm

Typical Gate Charge @ Vgs

7.6 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

Dual P-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 32,00

€ 1,28 Μονάδας (διαθέσιμο σε μία ταινία) (Exc. Vat)Χωρίς Φ.Π.Α

€ 39,68

€ 1,587 Μονάδας (διαθέσιμο σε μία ταινία) Με Φ.Π.Α

onsemi Dual P-Channel MOSFET, 4.1 A, 20 V, 8-Pin ChipFET NTHD4102PT1G
Επιλέγξτε συσκευασία

€ 32,00

€ 1,28 Μονάδας (διαθέσιμο σε μία ταινία) (Exc. Vat)Χωρίς Φ.Π.Α

€ 39,68

€ 1,587 Μονάδας (διαθέσιμο σε μία ταινία) Με Φ.Π.Α

onsemi Dual P-Channel MOSFET, 4.1 A, 20 V, 8-Pin ChipFET NTHD4102PT1G

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Ταινία
25 - 75€ 1,28€ 32,00
100 - 225€ 1,12€ 28,00
250+€ 0,99€ 24,75

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

4.1 A

Maximum Drain Source Voltage

20 V

Package Type

ChipFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

170 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Width

1.7mm

Transistor Material

Si

Number of Elements per Chip

2

Length

3.1mm

Typical Gate Charge @ Vgs

7.6 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1.1mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

Dual P-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more