onsemi Dual N-Channel MOSFET, 250 mA, 30 V, 6-Pin SOT-363 NTJD4001NT1G

Κωδικός Προϊόντος της RS: 780-0608PΚατασκευαστής: onsemiΚωδικός Κατασκευαστή: NTJD4001NT1G
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

250 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

2.72 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Length

2.2mm

Width

1.35mm

Transistor Material

Si

Typical Gate Charge @ Vgs

0.9 nC @ 5 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 138,00

€ 0,23 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

€ 171,12

€ 0,285 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α

onsemi Dual N-Channel MOSFET, 250 mA, 30 V, 6-Pin SOT-363 NTJD4001NT1G
Επιλέγξτε συσκευασία

€ 138,00

€ 0,23 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

€ 171,12

€ 0,285 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α

onsemi Dual N-Channel MOSFET, 250 mA, 30 V, 6-Pin SOT-363 NTJD4001NT1G

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Καρούλι
600 - 1450€ 0,23€ 11,50
1500+€ 0,18€ 9,00

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

250 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

2.72 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Length

2.2mm

Width

1.35mm

Transistor Material

Si

Typical Gate Charge @ Vgs

0.9 nC @ 5 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more