onsemi Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 NTJD5121NT1G

Κωδικός Προϊόντος της RS: 780-0627Κατασκευαστής: onsemiΚωδικός Κατασκευαστή: NTJD5121NT1G
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

266 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.35mm

Transistor Material

Si

Number of Elements per Chip

2

Length

2.2mm

Typical Gate Charge @ Vgs

0.9 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 8,00

€ 0,16 Μονάδας (Σε ένα πακέτο των 50) (Exc. Vat)Χωρίς Φ.Π.Α

€ 9,92

€ 0,198 Μονάδας (Σε ένα πακέτο των 50) Με Φ.Π.Α

onsemi Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 NTJD5121NT1G
Επιλέγξτε συσκευασία

€ 8,00

€ 0,16 Μονάδας (Σε ένα πακέτο των 50) (Exc. Vat)Χωρίς Φ.Π.Α

€ 9,92

€ 0,198 Μονάδας (Σε ένα πακέτο των 50) Με Φ.Π.Α

onsemi Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 NTJD5121NT1G

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Πακέτο
50 - 450€ 0,16€ 8,00
500 - 950€ 0,13€ 6,50
1000+€ 0,10€ 5,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

266 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.35mm

Transistor Material

Si

Number of Elements per Chip

2

Length

2.2mm

Typical Gate Charge @ Vgs

0.9 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

1mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more