Dual N-Channel MOSFET, 2.5 A, 30 V, 6-Pin WDFN onsemi NTLJD4116NTG

Κωδικός Προϊόντος της RS: 124-5405Κατασκευαστής: onsemiΚωδικός Κατασκευαστή: NTLJD4116NT1G
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Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

30 V

Package Type

WDFN

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.3 W

Maximum Gate Source Voltage

-8 V, +8 V

Width

2mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2mm

Typical Gate Charge @ Vgs

5.4 nC @ 4.5 V

Height

0.75mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Malaysia

Λεπτομέρειες Προϊόντος

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 0,50

Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,62

Μονάδας (Σε ένα καρούλι των 3000) (Including VAT) Με Φ.Π.Α

Dual N-Channel MOSFET, 2.5 A, 30 V, 6-Pin WDFN onsemi NTLJD4116NTG

€ 0,50

Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,62

Μονάδας (Σε ένα καρούλι των 3000) (Including VAT) Με Φ.Π.Α

Dual N-Channel MOSFET, 2.5 A, 30 V, 6-Pin WDFN onsemi NTLJD4116NTG
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

30 V

Package Type

WDFN

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.3 W

Maximum Gate Source Voltage

-8 V, +8 V

Width

2mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

2mm

Typical Gate Charge @ Vgs

5.4 nC @ 4.5 V

Height

0.75mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Malaysia

Λεπτομέρειες Προϊόντος

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more