onsemi Dual N-Channel MOSFET, 2.5 A, 30 V, 6-Pin WDFN NTLJD4116NT1G

Κωδικός Προϊόντος της RS: 790-5268Κατασκευαστής: onsemiΚωδικός Κατασκευαστή: NTLJD4116NT1G
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

30 V

Package Type

WDFN

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.3 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Length

2mm

Typical Gate Charge @ Vgs

5.4 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Number of Elements per Chip

2

Width

2mm

Minimum Operating Temperature

-55 °C

Height

0.75mm

Λεπτομέρειες Προϊόντος

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 6,50

€ 0,65 Μονάδας (διαθέσιμο σε μία ταινία) (Exc. Vat)Χωρίς Φ.Π.Α

€ 8,06

€ 0,806 Μονάδας (διαθέσιμο σε μία ταινία) Με Φ.Π.Α

onsemi Dual N-Channel MOSFET, 2.5 A, 30 V, 6-Pin WDFN NTLJD4116NT1G
Επιλέγξτε συσκευασία

€ 6,50

€ 0,65 Μονάδας (διαθέσιμο σε μία ταινία) (Exc. Vat)Χωρίς Φ.Π.Α

€ 8,06

€ 0,806 Μονάδας (διαθέσιμο σε μία ταινία) Με Φ.Π.Α

onsemi Dual N-Channel MOSFET, 2.5 A, 30 V, 6-Pin WDFN NTLJD4116NT1G

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Ταινία
10 - 90€ 0,65€ 6,50
100 - 240€ 0,57€ 5,70
250 - 490€ 0,52€ 5,20
500 - 990€ 0,44€ 4,40
1000+€ 0,42€ 4,20

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

30 V

Package Type

WDFN

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.3 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-8 V, +8 V

Length

2mm

Typical Gate Charge @ Vgs

5.4 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Number of Elements per Chip

2

Width

2mm

Minimum Operating Temperature

-55 °C

Height

0.75mm

Λεπτομέρειες Προϊόντος

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more